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Kingston 8GB DDR3L 1600Mhz Low Voltage SO-DIMM Notebook Ram (KVR16LS11/8GB)
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Kingston 8GB DDR3L 1600Mhz Low Voltage SO-DIMM Notebook Ram (KVR16LS11/8GB)


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RM  299.00  243.00  
Item details
SKU: KVR16LS11/8GB
Weight: 100 grams
Stock: Out of stock

Manufacturer: Kingston
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Description

This document describes ValueRAM's 1G x 64-bit (8GB) DDR3L-1600 CL11 SDRAM (Synchronous DRAM), 2Rx8, low voltage, memory module, based on sixteen 512M x 8-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR3-1600 timing of 11-11-11 at 1.35V or 1.5V. This 204-pin SODIMM uses gold contact fingers. The electrical and mechanical specifications are as follows:

 

Features

• JEDEC standard 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V) Power Supply

• VDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V)

• 800MHz fCK for 1600Mb/sec/pin

• 8 independent internal bank

• Programmable CAS Latency: 11, 10, 9, 8, 7, 6

• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock

• 8-bit pre-fetch

• Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]

• Bi-directional Differential Data Strobe

• Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)

• On Die Termination using ODT pin

• Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C

• Asynchronous Reset

• PCB: Height 1.18” (30mm), double sided component

 

Specification

CL(IDD) : 11 cycles
Row Cycle Time (tRCmin) : 48.125ns (min.)
Refresh to Active/Refresh : 260ns (min.)
Command Time (tRFCmin)
Row Active Time (tRASmin) : 35ns (min.)
Maximum Operating Power : (1.35V) = 2.721W*
UL Rating : 94 V - 0
Operating Temperature : 0oC to 85oC
Storage Temperature : -55o C to +100oC
 
*Power will vary depending on the SDRAM.